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IBL: Raith Velion S Ion Beam Lithography System

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Overview

The Velion S features:

  • Unique multi-ion-species FIB technology (IonSelect) with the AuGeSi LMAIS
  • Vertically mounted FIB column and horizontal 4-inch laser interferometer stage
  • Large-area FIB patterning capabilities on a true lithography platform - IBL
  • Automated, stable nanofabrication over several days
  • Ga-free TEM sample preparation
  • Ion microscopy and imaging with light ions
  • Easy, fast and reliable ion imaging, 3D sample reconstruction without stage tilt
  • Sample analysis & in-situ process monitoring enabled by tailored SEM column

Additional details will be added to this section soon.

Installation Timeline (Subject to Change)

March 20, 2025Raith Velion S IBL Delivery
March 24 - April 18, 2025Velion Installation
April 22 - 24, 2025

Staff and Advanced User Training
(contact nano-ebeam-staff@lists.stanford.edu
if you would like to be part of this)

April 25 - May 16, 2025Staff Testing and Additional Setup
May 19, 2025 (Anticipated)Begin New User Trainings

Contact Information

nano-ebeam-staff@lists.stanford.edu
Rich Tiberio
Stanley Lin
Doc Daugherty